FAIRCHILD SEMICONDUCTOR Parts
Total Parts:
4,984
| Part Number | Description | Price |
|---|---|---|
| 2N5306 | DARLINGTON BIPOLAR TRANSISTOR; PACKAGE/CASE:TO-92; LEADED PROCESS COMPATIBLE:YES; PEAK REFLOW COMPATIBLE (260 C):YES; CURRENT RATING:1.2A; MOUNTING TY | $0.10 |
| 2N5307 | BIPOLAR TRANSISTOR, NPN, 40V, TO-92; TRANSISTOR POLARITY:NPN; COLLECTOR EMITTER VOLTAGE, V(BR)CEO:40V; POWER DISSIPATION, PD:625MW; DC COLLECTOR CURRE | $0.20 |
| 2N5308 | SMALL SIGNAL BIPOLAR TRANSISTOR; TRANSISTOR POLARITY:N CHANNEL; POWER DISSIPATIONPD:0.625W; DC CURRENT GAIN MIN (HFE):7000; PACKAGE/CASE:TO-92; C-E BR | $0.46 |
| 2N5366 | RF TRANSISTOR, PNP, -40V, TO-92; TRANSISTOR POLARITY:PNP; COLLECTOR EMITTER VOLTAGE V(BR)CEO:40V; POWER DISSIPATION PD:625MW; DC COLLECTOR CURRENT:500 | $3.75 |
| 2N5400 | BIPOLAR TRANSISTOR, PNP -120V TO-92; TRANSISTOR POLARITY:PNP; COLLECTOR EMITTER VOLTAGE, V(BR)CEO:120V; TRANSITION FREQUENCY TYP, FT:400MHZ; POWER DIS | $0.15 |
| 2N5457 | RF JFET, N CHANNEL, 15V, TO-92; NO. OF PINS:3; BREAKDOWN VOLTAGE VBR:-25V; CURRENT RATING:10MA; GATE-SOURCE BREAKDOWN VOLTAGE:25V; GATE-SOURCE CUTOFF | $0.92 |
| 2N5458 | RF JFET, N CHANNEL, 15V, TO-92; TRANSISTOR TYPE:RF JFET; DRAIN SOURCE VOLTAGE VDS:15V; CONTINUOUS DRAIN CURRENT ID:9MA; POWER DISSIPATION PD:625MW; NO | $0.64 |
| 2N5459 | RF JFET, N CHANNEL, 15V, TO-92; TRANSISTOR TYPE:JFET; DRAIN SOURCE VOLTAGE VDS:15V; CONTINUOUS DRAIN CURRENT ID:16MA; POWER DISSIPATION PD:625MW; NOIS | $0.84 |
| 2N5460 | P CHANNEL JFET, 40V, TO-92; BREAKDOWN VOLTAGE VBR:40V; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:6V; POWER DISSIPATION PD:350MW; OPERATING TEMPERATURE R | $0.18 |
| 2N5461 | P CHANNEL JFET, 40V, TO-92; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE VBR:40V; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:7.5V; POWER DISSIPATION PD:350MW; | $0.96 |
| 2N5462 | P CHANNEL JFET, 40V, TO-92; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE VBR:40V; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:9V; POWER DISSIPATION PD:350MW; O | $1.16 |
| 2N5484 | RF JFET, N CHANNEL, 15V, TO-92; TRANSISTOR TYPE:RF JFET; DRAIN SOURCE VOLTAGE VDS:15V; CONTINUOUS DRAIN CURRENT ID:5MA; POWER DISSIPATION PD:350MW; NO | $0.64 |
| 2N5484D74Z | RF JFET, N CHANNEL, 15V, TO-92; TRANSISTOR TYPE:RF FET; DRAIN SOURCE VOLTAGE VDS:15V; POWER DISSIPATION PD:350MW; NOISE FIGURE TYP:4DB; OPERATING TEMP | $0.56 |
| 2N5485 | N CHANNEL JFET, -25V, TO-92; TRANSISTOR TYPE:RF JFET; CONTINUOUS DRAIN CURRENT ID:10MA; POWER DISSIPATION PD:350MW; NOISE FIGURE TYP:4DB; OPERATING TE | $0.64 |
| 2N5486 | N CHANNEL JFET, -25V, TO-92; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE VBR:-25V; ZERO GATE VOLTAGE DRAIN CURRENT IDSS:20MA; GATE-SOURCE CUTOFF VOLTAGE V | $1.74 |
| 2N5494 | TRANSISTOR BIPOLAR JUNCTION 7AMP 60V 50WATT | $0.18 |
| 2N5551 | TRANSISTOR, NPN, TO-92; TRANSISTOR POLARITY:NPN; COLLECTOR EMITTER VOLTAGE V(BR) CEO:160V; POWER DISSIPATION PD:625MW; DC COLLECTOR CURRENT:600MA; DC | $0.14 |
| 2N5555 | N CHANNEL JFET, -25V, TO-92; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE, VBR:-25V; GATE-SOURCE CUTOFF VOLTAGE MAX, VGS(OFF):9.5V; POWER DISSIPATION, PD:3 | $0.13 |
| 2N5638 | RF JFET, N CHANNEL, 20V, TO-92; TRANSISTOR TYPE:JFET; POWER DISSIPATION PD:350MW; OPERATING TEMPERATURE RANGE:-55 C TO +150 C; RF TRANSISTOR CASE:TO-9 | $1.27 |
| 2N5639 | JFET; TRANSISTOR POLARITY:N CHANNEL; BREAKDOWN VOLTAGEV(BR)GSS:-30V; ZERO GATE VOLTAGE DRAIN CURRENT MINIDSS:25MA; GATE-SOURCE CUTOFF VOLTAGE MAXVGS(O | $0.16 |
| 2N5770 | RF TRANSISTOR, NPN, 15V, TO-92; TRANSISTOR POLARITY:NPN; COLLECTOR EMITTER VOLTAGE, V(BR)CEO:15V; POWER DISSIPATION, PD:350MW; DC COLLECTOR CURRENT:50 | $0.11 |
| 2N5771 | BIPOLAR TRANSISTOR, PNP, -15V TO-92; TRANSISTOR POLARITY:PNP; COLLECTOR EMITTER VOLTAGE V(BR)CEO:15V; POWER DISSIPATION PD:350MW; DC COLLECTOR CURRENT | $1.53 |
| 2N5830 | BIPOLAR TRANSISTOR, NPN, 100V TO-92; TRANSISTOR POLARITY:NPN; COLLECTOR EMITTER VOLTAGE, V(BR)CEO:100V; POWER DISSIPATION, PD:625MW; DC COLLECTOR CURR | $0.11 |
| 2N5831 | TRANSISTOR 3PIN | $0.63 |
| 2N5950 | N CHANNEL JFET, -30V, TO-92; TRANSISTOR TYPE:JFET; CURRENT RATING:15MA; LEADED PROCESS COMPATIBLE:YES; PACKAGE/CASE:TO-92; PEAK REFLOW COMPATIBLE (260 | $0.22 |
| 2N5951 | N CHANNEL JFET, -30V, TO-92; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE VBR:-30V; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:-5V; POWER DISSIPATION PD:350MW | $0.26 |
| 2N5952 | N CHANNEL JFET, -30V, TO-92; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE VBR:-30V; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:-3.5V; POWER DISSIPATION PD:350 | $0.09 |
| 2N5953 | MIN QTY 2000 JFET; PACKAGE/CASE:TO-92; CURRENT RATING:5MA; LEADED PROCESS COMPATIBLE:YES; PEAK REFLOW COMPATIBLE (260 C):YES; VOLTAGE RATING:3V; MOUNT | $0.22 |
| 2N5962 | BIPOLAR TRANSISTOR, NPN, 45V, TO-92; TRANSISTOR POLARITY:NPN; COLLECTOR EMITTER VOLTAGE V(BR)CEO:45V; POWER DISSIPATION PD:625MW; DC COLLECTOR CURRENT | $0.07 |
| 2N6076 | BIPOLAR TRANSISTOR; LEADED PROCESS COMPATIBLE:YES; PEAK REFLOW COMPATIBLE (260 C):YES; CURRENT RATING:500MA; VOLTAGE RATING:25V ROHS COMPLIANT: YES | $0.10 |